Si Wire Ring Resonator Design
Using APSS Device Module

Ring resonator which is key device component construct PICs.
Here, microstructure ring resonator having 5 um radius is described.

Waveguide Design

TE mode analysis for Waveguide which is used for ring resonator (Device).
Since "Scan" option is used for Wg in Device Module, Wg must be scanned
for Wg in Waveguide Module.

Ring Resonator Design

Calculation has been carried out between wavelenght of 1.5 and 1.6 um
(Wg=200〜600nm) using "Scan" option. In the present demonstration,
we will show the performance sensitivities caused by fabrication accuracy.
Therefore, Wg values are changed under the condition of Wg+Gap=700nm.

Ring resonator structure used in the present calculation

Simulation Results

S-parameter analysis is executed scaning the wavelength between 1.5 and 1.6 um.

Obtained S-parameter results
（Field distribution and response at the above three arrow points are shown in the below.)

Results for Wg=200nm and Gap=500nm

Results for Wg=250nm and Gap=450nm

Results for Wg=500nm and Gap=200nm

It can bee seen from S-parameter results that confinement is descreased
with descease the waveguide width of Wg. In the present calculation, cupling to
the ring is enhanced even the Gap increases. On the otherhand, the selection of
the wavelength is reduced under too large Wg values.


Reference for the device structures
T. Tsuchizawa et al."Microphotonics devices based on silicon microfabrication
technology," IEEE J. Selected Topics in Quantum Electron., vol. 11, No.1,
pp.232-240, Jan./Feb. 2005.